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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3812
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3812 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
? Super low on-state resistance
R DS(on)1 = 2.8 m ? MAX. (V GS = 10 V, I D = 55 A)
R DS(on)2 = 3.7 m ? MAX. (V GS = 4.5 V, I D = 55 A)
? High current rating: I D(DC) = ±110 A
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
2SK3812-ZP
PACKAGE
TO-263 (MP-25ZP)
(TO-263)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V DSS
V GSS
I D(DC)
60
±20
±110
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±440
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation (T A = 25°C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
213
1.5
150
? 55 to +150
W
W
°C
°C
Single Avalanche Energy
Note2
E AS
397
mJ
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note3
Note3
I AR
E AR
63
397
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, V DD = 30 V, R G = 25 ? , V GS = 20 → 0 V, L = 100 μ H
3. T ch(peak) ≤ 150°C, R G = 25 ?
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16738EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
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2SK3812-ZP-E1-AZ
制造商:Renesas Electronics Corporation 功能描述:
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